Результаты поиска BLS6G3135-20,112

Найдено 2 результатов.

• BLS6G3135-20,112
  NXP Semiconductors — NXP Semiconductors BLS6G3135-20,112 Application: S-Band Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 2.1 A Current - Test: 50mA Current Rating: 2.1A Drain Efficiency (typ): 45% Drain Source Resistance (max): 580mohm Drain Source Voltage (max): 60V Drain-source Breakdown Voltage: 60 V Forward Transconductance (typ): 2.8S Frequency: 3.1GHz ~ 3.5GHz Frequency (max): 3.5GHz Frequency (min): 3.1GHz Gain: 15.5dB Gate-source Breakdown Voltage: - 0.5 V to + 13 V ID_COMPONENTS: 3738134 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mode Of Operation: Pulsed RF Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 225C Output Power (max): 20W(Typ) Package / Case: SOT-608A Package Type: CDFM Pin Count: 3 Power - Output: 20W Power Gain (typ)@vds: 15.5@32VdB Resistance Drain-source Rds (on): 0.58 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 60V Voltage - Test: 32V Vswr (max): 5 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 20 W Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 13 V Product Type: MOSFET Power Resistance Drain-Source RDS (on): 0.58 Ohms Factory Pack Quantity: 20 Part # Aliases: BLS6G3135-20 Other Names: 934060062112, BLS6G3135-20
• BLS6G3135-20,112
  NXP Semiconductors — NXP Semiconductors BLS6G3135-20,112 Application: S-Band Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 2.1 A Current - Test: 50mA Current Rating: 2.1A Drain Efficiency (typ): 45% Drain Source Resistance (max): 580mohm Drain Source Voltage (max): 60V Drain-source Breakdown Voltage: 60 V Forward Transconductance (typ): 2.8S Frequency: 3.1GHz ~ 3.5GHz Frequency (max): 3.5GHz Frequency (min): 3.1GHz Gain: 15.5dB Gate-source Breakdown Voltage: - 0.5 V to + 13 V ID_COMPONENTS: 3738134 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mode Of Operation: Pulsed RF Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 225C Output Power (max): 20W(Typ) Package / Case: SOT-608A Package Type: CDFM Pin Count: 3 Power - Output: 20W Power Gain (typ)@vds: 15.5@32VdB Resistance Drain-source Rds (on): 0.58 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 60V Voltage - Test: 32V Vswr (max): 5 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 20 W Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: 13 V Product Type: MOSFET Power Resistance Drain-Source RDS (on): 0.58 Ohms Factory Pack Quantity: 20 Part # Aliases: BLS6G3135-20 Other Names: 934060062112, BLS6G3135-20