Результаты поиска BLS6G3135-120,112
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- NXP Semiconductors — NXP Semiconductors BLS6G3135-120,112 Configuration: Single Continuous Drain Current: 7.2 A Current - Test: 100mA Current Rating: 7.2A Drain-source Breakdown Voltage: 60 V Frequency: 3.1GHz ~ 3.5GHz Gain: 11dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3738178 Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT502A Power - Output: 130W Resistance Drain-source Rds (on): 0.16 Ohms Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 60V Voltage - Test: 32V Other Names: 934060063112, BLS6G3135-120