Результаты поиска BLF861A,112

Найдено 2 результатов.

• D15S120
  Infineon Technologies —
• BLF861A,112
  NXP Semiconductors — NXP Semiconductors BLF861A,112 Application: UHF Channel Mode: Enhancement Channel Type: N Configuration: Single Dual Drain Dual Gate Continuous Drain Current: 18 A Current - Test: 1A Current Rating: 18A Drain Efficiency (typ): 50% Drain Source Resistance (max): 160(Typ)mohm Drain Source Voltage (max): 65V Drain-source Breakdown Voltage: 65 V Forward Transconductance (typ): 4S Frequency: 860MHz Frequency (max): 860MHz Gain: 14.5dB Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1949168 Input Capacitance (typ)@vds: 82@32VpF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 200 C Minimum Operating Temperature: - 65 C Mode Of Operation: 2-Tone Class-AB/CW Class-AB/PAL BG Class-AB Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 200C Output Capacitance (typ)@vds: 40@32VpF Output Power (max): 150W Package / Case: SOT540A Package Type: LDMOST Pin Count: 5 Power - Output: 150W Power Dissipation: 318000 mW Power Dissipation (max): 318000mW Power Gain (typ)@vds: 14.5@32V/14(Min)@32VdB Resistance Drain-source Rds (on): 0.16 Ohm (Typ) Reverse Capacitance (typ): 6@32VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 32V Vswr (max): 10 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 150 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: +/- 15 V Product Type: RF MOSFET Power Resistance Drain-Source RDS (on): 0.16 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF861A Other Names: 568-2407, 934056499112, BLF861A