Результаты поиска BLF7G27L-135,112

Найдено 2 результатов.

• BLF7G27L-135,112
  Philips Semiconductors — Philips Semiconductors BLF7G27L-135,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.6 GHz to 2.7 GHz Gain: 16.5 dB Output Power: 45 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 28 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502A Mounting Style: SMD/SMT Factory Pack Quantity: 20
• BLF7G27L-135,112
  NXP Semiconductors — Philips Semiconductors BLF7G27L-135,112 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 2.6 GHz to 2.7 GHz Gain: 16.5 dB Output Power: 45 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 28 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502A Mounting Style: SMD/SMT Factory Pack Quantity: 20