Результаты поиска BLF7G20LS-200,118

Найдено 2 результатов.

• BLF7G20LS-200,118
  Philips Semiconductors — Philips Semiconductors BLF7G20LS-200,118 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 1.8 GHz to 1.99 GHz Gain: 18 dB Output Power: 55 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 50.6 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502B Mounting Style: SMD/SMT Resistance Drain-Source RDS (on): 0.093 Ohms Factory Pack Quantity: 100
• BLF7G20LS-200,118
  NXP Semiconductors — Philips Semiconductors BLF7G20LS-200,118 RoHS: yes Configuration: Single Transistor Polarity: N-Channel Frequency: 1.8 GHz to 1.99 GHz Gain: 18 dB Output Power: 55 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 50.6 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: SOT-502B Mounting Style: SMD/SMT Resistance Drain-Source RDS (on): 0.093 Ohms Factory Pack Quantity: 100