Результаты поиска BLF6G38-25,112

Найдено 2 результатов.

• BLF6G38-25,112
  NXP Semiconductors — NXP Semiconductors BLF6G38-25,112 Configuration: Single Continuous Drain Current: 2.1 A Current - Test: 225mA Current Rating: 8.2A Drain-source Breakdown Voltage: 65 V Frequency: 3.4GHz Gain: 15dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3738132 Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT-608A Power - Output: 4.5W Resistance Drain-source Rds (on): 0.58 Ohms Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Other Names: 934061138112, BLF6G38-25
• BLF6G38-25,112
  NXP Semiconductors — NXP Semiconductors BLF6G38-25,112 Configuration: Single Continuous Drain Current: 2.1 A Current - Test: 225mA Current Rating: 8.2A Drain-source Breakdown Voltage: 65 V Frequency: 3.4GHz Gain: 15dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3738132 Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT-608A Power - Output: 4.5W Resistance Drain-source Rds (on): 0.58 Ohms Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Other Names: 934061138112, BLF6G38-25