Результаты поиска BLF6G38-10G,118

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• BLF6G38-10G,118
  Philips Semiconductors — Philips Semiconductors BLF6G38-10G,118 Product Category: Transistors RF MOSFET Power RoHS: yes Configuration: Single Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 3.1 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: CDFM Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Product Type: MOSFET Power Resistance Drain-Source RDS (on): 1.256 Ohms Factory Pack Quantity: 100 Part # Aliases: /T3 BLF6G38-10G
• BLF6G38-10G,118
  NXP Semiconductors — Philips Semiconductors BLF6G38-10G,118 Product Category: Transistors RF MOSFET Power RoHS: yes Configuration: Single Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 3.1 A Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Package / Case: CDFM Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Product Type: MOSFET Power Resistance Drain-Source RDS (on): 1.256 Ohms Factory Pack Quantity: 100 Part # Aliases: /T3 BLF6G38-10G