Результаты поиска BLF6G22LS-130,112
Найдено 3 результатов.
- Sharp Electronics —
- KOA Speer — 0603 SMD Thick Film Chip Resistors 0.536ohms 1% 200 PPM
- NXP Semiconductors — NXP Semiconductors BLF6G22LS-130,112 Configuration: Single Continuous Drain Current: 34 A Current - Test: 1.1A Current Rating: 34A Drain-source Breakdown Voltage: 65 V Frequency: 2.11GHz Gain: 17dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3738046 Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT502B Power - Output: 30W Resistance Drain-source Rds (on): 0.135 Ohms Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Product Category: Transistors RF MOSFET Power RoHS: yes Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 13 V Product Type: MOSFET Power Resistance Drain-Source RDS (on): 0.135 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G22LS-130 Other Names: 568-4280, 934060923112, BLF6G22LS-130