Результаты поиска BLF6G22LS-100,112
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- NXP Semiconductors — NXP Semiconductors BLF6G22LS-100,112 Channel Mode: Enhancement Channel Type: N Configuration: Single Continuous Drain Current: 29 A Current - Test: 950mA Current Rating: 29A Drain Efficiency (typ): 29% Drain Source Resistance (max): 160@6.15Vmohm Drain Source Voltage (max): 65V Drain-source Breakdown Voltage: 65 V Forward Transconductance (typ): 11S Frequency: 2.11GHz Frequency (max): 2.17GHz Frequency (min): 2.11GHz Gain: 18.5dB Gate-source Breakdown Voltage: 13 V ID_COMPONENTS: 3738165 Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 225 C Minimum Operating Temperature: - 65 C Mode Of Operation: 2-Carrier W-CDMA Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 225C Output Power (max): 25W(Typ) Package / Case: SOT502B Package Type: LDMOST Pin Count: 3 Power - Output: 25W Power Gain (typ)@vds: 18.2@28VdB Resistance Drain-source Rds (on): 0.16 Ohms Reverse Capacitance (typ): 2.1@28VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Vswr (max): 10 Product Category: Transistors RF MOSFET Power RoHS: yes Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: 13 V Product Type: MOSFET Power Resistance Drain-Source RDS (on): 0.16 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF6G22LS-100 Other Names: 934061129112, BLF6G22LS-100