Результаты поиска BLF6G10LS-200RN,11

Найдено 2 результатов.

• BLF6G10LS-200RN,11
  NXP Semiconductors — NXP Semiconductors BLF6G10LS-200RN,11 Current - Test: 1.4A Current Rating: 49A Frequency: 871.5MHz Gain: 20dB ID_COMPONENTS: 3737997 Noise Figure: - Package / Case: SOT502B Power - Output: 40W Series: - Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V RoHS: yes Configuration: Single Transistor Polarity: N-Channel Output Power: 40 W Drain-Source Breakdown Voltage: 65 V Continuous Drain Current: 49 A Gate-Source Breakdown Voltage: +/- 13 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Factory Pack Quantity: 100 Other Names: 934063255118
• BLF6G10LS-200RN:11
  NXP Semiconductors — TRANS LDMOS POWER 200W SOT-502B