Результаты поиска BLF647,112
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- NXP Semiconductors — NXP Semiconductors BLF647,112 Configuration: Dual Common Source Continuous Drain Current: 18 A Current - Test: - Current Rating: 18A Drain-source Breakdown Voltage: 65 V Frequency: 600MHz Gain: 14.5dB Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1949167 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 200 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: - Package / Case: SOT540A Power - Output: 120W Power Dissipation: 290000 mW Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 65V Voltage - Test: 28V Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 150 W Drain-Source Breakdown Voltage: 65 V Gate-Source Breakdown Voltage: +/- 15 V Product Type: RF MOSFET Power Resistance Drain-Source RDS (on): 0.16 Ohms Factory Pack Quantity: 20 Part # Aliases: BLF647 Other Names: 568-2419, 934056498112, BLF647