Результаты поиска BLF574,112
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- NXP Semiconductors — NXP Semiconductors BLF574,112 Application: HF/VHF Channel Mode: Enhancement Channel Type: N Continuous Drain Current: 56 A Current - Test: 1A Current Rating: 56A Drain Efficiency (typ): 70% Drain Source Resistance (max): 90(Typ)@6Vmohm Drain Source Voltage (max): 110V Drain-source Breakdown Voltage: 110 V Forward Transconductance (typ): 17S Forward Transconductance Gfs (max / Min): 17 S Frequency: 225MHz Frequency (max): 500MHz Gain: 26.5dB Gate-source Breakdown Voltage: 11 V ID_COMPONENTS: 1949165 Input Capacitance (typ)@vds: 300@50VpF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mode Of Operation: CW Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 2 Operating Temp Range: -65C to 225C Output Capacitance (typ)@vds: 72@50VpF Output Power (max): 600W Package / Case: SOT539A Package Type: LDMOST Pin Count: 5 Power - Output: 400W Power Dissipation: 500 W Power Gain (typ)@vds: 26.5@50VdB Quantity: 45 Resistance Drain-source Rds (on): 0.14 Ohms Reverse Capacitance (typ): 1.5@50VpF Screening Level: Military Series: - Transistor Type: LDMOS Voltage - Rated: 110V Voltage - Test: 50V Vswr (max): 13 RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Output Power: 500 W Drain-Source Breakdown Voltage: 110 V Gate-Source Breakdown Voltage: 11 V Maximum Operating Temperature: + 150 C Forward Transconductance gFS (Max / Min): 17 S Resistance Drain-Source RDS (on): 0.14 Ohms Factory Pack Quantity: 20 Other Names: 568-4736, 934061965112