Результаты поиска BLA0912-250,112

Найдено 2 результатов.

• BLA0912-250,112
  NXP Semiconductors — NXP Semiconductors BLA0912-250,112 Application: Avionics Channel Mode: Enhancement Channel Type: N Configuration: Single Current - Test: - Current Rating: 1?µA Drain Efficiency (typ): 50% Drain Source Resistance (max): 60(Typ)@9Vmohm Drain Source Voltage (max): 75V Drain-source Breakdown Voltage: 75 V Forward Transconductance (typ): 9S Frequency: 960MHz ~ 1.22GHz Frequency (max): 1.215GHz Frequency (min): 960MHz Gain: 13dB Gate-source Breakdown Voltage: +/- 22 V Maximum Operating Temperature: + 200 C Minimum Operating Temperature: - 65 C Mode Of Operation: Class-AB Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 200C Output Power (max): 250W(Min) Package / Case: SOT502A Package Type: LDMOST Pin Count: 3 Power - Output: 250W Power Dissipation: 700 W Power Dissipation (max): 700000mW Power Gain (typ)@vds: 13@36VdB Resistance Drain-source Rds (on): 0.06 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 75V Voltage - Test: 36V Vswr (max): 5 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 250 W Drain-Source Breakdown Voltage: 75 V Continuous Drain Current: 300 mA Gate-Source Breakdown Voltage: +/- 22 V Resistance Drain-Source RDS (on): 0.06 Ohms Factory Pack Quantity: 20 Part # Aliases: BLA0912-250 Other Names: 934057490112, BLA0912-250
• BLA0912-250,112
  NXP Semiconductors — NXP Semiconductors BLA0912-250,112 Application: Avionics Channel Mode: Enhancement Channel Type: N Configuration: Single Current - Test: - Current Rating: 1?µA Drain Efficiency (typ): 50% Drain Source Resistance (max): 60(Typ)@9Vmohm Drain Source Voltage (max): 75V Drain-source Breakdown Voltage: 75 V Forward Transconductance (typ): 9S Frequency: 960MHz ~ 1.22GHz Frequency (max): 1.215GHz Frequency (min): 960MHz Gain: 13dB Gate-source Breakdown Voltage: +/- 22 V Maximum Operating Temperature: + 200 C Minimum Operating Temperature: - 65 C Mode Of Operation: Class-AB Mounting: Screw Mounting Style: SMD/SMT Noise Figure: - Number Of Elements: 1 Operating Temp Range: -65C to 200C Output Power (max): 250W(Min) Package / Case: SOT502A Package Type: LDMOST Pin Count: 3 Power - Output: 250W Power Dissipation: 700 W Power Dissipation (max): 700000mW Power Gain (typ)@vds: 13@36VdB Resistance Drain-source Rds (on): 0.06 Ohms Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: LDMOS Voltage - Rated: 75V Voltage - Test: 36V Vswr (max): 5 Product Category: Transistors RF MOSFET Power RoHS: yes Output Power: 250 W Drain-Source Breakdown Voltage: 75 V Continuous Drain Current: 300 mA Gate-Source Breakdown Voltage: +/- 22 V Resistance Drain-Source RDS (on): 0.06 Ohms Factory Pack Quantity: 20 Part # Aliases: BLA0912-250 Other Names: 934057490112, BLA0912-250