Результаты поиска BFU710F,115

Найдено 2 результатов.

• BFU710F,115
  NXP Semiconductors — NXP Semiconductors BFU710F,115 Current - Collector (ic) (max): 10mA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 2V Frequency - Transition: 43GHz Gain: - Mounting Type: Surface Mount Noise Figure (db Typ @ F): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz Package / Case: SOT-343F Power - Max: 136mW Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 2.8V RoHS: yes Emitter- Base Voltage VEBO: 1 V Continuous Collector Current: 10 mA Power Dissipation: 136 mW Mounting Style: SMD/SMT Collector- Emitter Voltage VCEO Max: 2.8 V Maximum Operating Frequency: 110 GHz Factory Pack Quantity: 3000
• BFU710F,115
  NXP Semiconductors — NXP Semiconductors BFU710F,115 Current - Collector (ic) (max): 10mA Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1mA, 2V Frequency - Transition: 43GHz Gain: - Mounting Type: Surface Mount Noise Figure (db Typ @ F): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz Package / Case: SOT-343F Power - Max: 136mW Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 2.8V RoHS: yes Emitter- Base Voltage VEBO: 1 V Continuous Collector Current: 10 mA Power Dissipation: 136 mW Mounting Style: SMD/SMT Collector- Emitter Voltage VCEO Max: 2.8 V Maximum Operating Frequency: 110 GHz Factory Pack Quantity: 3000