Результаты поиска BFQ67,215

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• BFQ67,215
  NXP Semiconductors — NXP Semiconductors BFQ67,215 Collector- Emitter Voltage Vceo Max: 10 V Configuration: Single Continuous Collector Current: 0.05 A Current - Collector (ic) (max): 50mA Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V Dc Current Gain Hfe Max: 60 @ 15mA @ 5V Emitter- Base Voltage Vebo: 2.5 V Frequency - Transition: 8GHz Gain: - ID_COMPONENTS: 1948999 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 8000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 300mW Power Dissipation: 300 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 10V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 10 V Emitter- Base Voltage VEBO: 2.5 V DC Current Gain hFE Max: 60 Gain Bandwidth Product fT: 8000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFQ67 T/R Other Names: 568-1647-2, 933677740215, BFQ67 T/R