Результаты поиска BFG425W,115

Найдено 2 результатов.

• BFG425W,115
  NXP Semiconductors — NXP Semiconductors BFG425W,115 Collector- Emitter Voltage Vceo Max: 4.5 V Configuration: Single Dual Emitter Continuous Collector Current: 0.03 A Current - Collector (ic) (max): 30mA Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V Dc Current Gain Hfe Max: 50 @ 25mA @ 2V Emitter- Base Voltage Vebo: 1 V Frequency - Transition: 25GHz Gain: 20dB ID_COMPONENTS: 1949028 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 25000 MHz (Typ) Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Package / Case: SOT-343R Power - Max: 135mW Power Dissipation: 135 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 4.5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 4.5 V Emitter- Base Voltage VEBO: 1 V DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 25000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG425W T/R Other Names: 568-1644-2, 934047470115, BFG425W T/R
• BFG425W,115
  NXP Semiconductors — NXP Semiconductors BFG425W,115 Collector- Emitter Voltage Vceo Max: 4.5 V Configuration: Single Dual Emitter Continuous Collector Current: 0.03 A Current - Collector (ic) (max): 30mA Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V Dc Current Gain Hfe Max: 50 @ 25mA @ 2V Emitter- Base Voltage Vebo: 1 V Frequency - Transition: 25GHz Gain: 20dB ID_COMPONENTS: 1949028 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 25000 MHz (Typ) Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Package / Case: SOT-343R Power - Max: 135mW Power Dissipation: 135 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 4.5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 4.5 V Emitter- Base Voltage VEBO: 1 V DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 25000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG425W T/R Other Names: 568-1644-2, 934047470115, BFG425W T/R