Результаты поиска BFG424F,115

Найдено 2 результатов.

• BFG424F,115
  NXP Semiconductors — NXP Semiconductors BFG424F,115 Collector- Emitter Voltage Vceo Max: 4.5 V Configuration: Single Continuous Collector Current: 25 mA Current - Collector (ic) (max): 30mA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V Dc Current Gain Hfe Max: 50 @ 25mA @ 2V Emitter- Base Voltage Vebo: 1 V Frequency - Transition: 25GHz Gain: 23dB ID_COMPONENTS: 1948984 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 25 GHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Package / Case: SOT-343N Power - Max: 135mW Power Dissipation: 135 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 4.5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 4.5 V Emitter- Base Voltage VEBO: 1 V DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 25000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG424F T/R Other Names: 568-1981-2, 934059126115, BFG424F T/R
• BFG424F,115
  NXP Semiconductors — NXP Semiconductors BFG424F,115 Collector- Emitter Voltage Vceo Max: 4.5 V Configuration: Single Continuous Collector Current: 25 mA Current - Collector (ic) (max): 30mA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V Dc Current Gain Hfe Max: 50 @ 25mA @ 2V Emitter- Base Voltage Vebo: 1 V Frequency - Transition: 25GHz Gain: 23dB ID_COMPONENTS: 1948984 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 25 GHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Package / Case: SOT-343N Power - Max: 135mW Power Dissipation: 135 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 4.5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 4.5 V Emitter- Base Voltage VEBO: 1 V DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 25000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG424F T/R Other Names: 568-1981-2, 934059126115, BFG424F T/R