Результаты поиска BFG35,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors BFG35,115 Collector- Emitter Voltage Vceo Max: 18 V Configuration: Single Continuous Collector Current: 0.15 A Current - Collector (ic) (max): 150mA Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 10V Dc Current Gain Hfe Max: 25 @ 100mA @ 10V Emitter- Base Voltage Vebo: 2 V Frequency - Transition: 4GHz Gain: - ID_COMPONENTS: 1949080 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 4000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1W Power Dissipation: 1000 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 18V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 18 V Emitter- Base Voltage VEBO: 2 V DC Current Gain hFE Max: 25 Gain Bandwidth Product fT: 4000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BFG35 T/R Other Names: 933919910115::BFG35 T/R::BFG35 T/R