Результаты поиска BFG310W/XR,115

Найдено 2 результатов.

• BFG310W/XR,115
  NXP Semiconductors — NXP Semiconductors BFG310W/XR,115 Collector- Emitter Voltage Vceo Max: 6 V Configuration: Single Continuous Collector Current: 10 mA Current - Collector (ic) (max): 10mA Dc Collector/base Gain Hfe Min: 60 Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V Dc Current Gain Hfe Max: 60 @ 5mA @ 3V Emitter- Base Voltage Vebo: 2 V Frequency - Transition: 14GHz Gain: 18dB ID_COMPONENTS: 1949026 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 14 GHz Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1dB @ 2GHz Package / Case: CMPAK-4 Power - Max: 60mW Power Dissipation: 60 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 6V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 6 V Emitter- Base Voltage VEBO: 2 V DC Collector/Base Gain hfe Min: 60 DC Current Gain hFE Max: 60 Gain Bandwidth Product fT: 14000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG310W/XR T/R Other Names: 568-1976-2, 934057941115, BFG310W/XR T/R
• BFG310W/XR,115
  NXP Semiconductors — NXP Semiconductors BFG310W/XR,115 Collector- Emitter Voltage Vceo Max: 6 V Configuration: Single Continuous Collector Current: 10 mA Current - Collector (ic) (max): 10mA Dc Collector/base Gain Hfe Min: 60 Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V Dc Current Gain Hfe Max: 60 @ 5mA @ 3V Emitter- Base Voltage Vebo: 2 V Frequency - Transition: 14GHz Gain: 18dB ID_COMPONENTS: 1949026 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 14 GHz Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1dB @ 2GHz Package / Case: CMPAK-4 Power - Max: 60mW Power Dissipation: 60 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 6V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 6 V Emitter- Base Voltage VEBO: 2 V DC Collector/Base Gain hfe Min: 60 DC Current Gain hFE Max: 60 Gain Bandwidth Product fT: 14000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG310W/XR T/R Other Names: 568-1976-2, 934057941115, BFG310W/XR T/R