Результаты поиска BFG31,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors BFG31,115 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Single Continuous Collector Current: 0.1 A Current - Collector (ic) (max): 100mA Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 70mA, 10V Dc Current Gain Hfe Max: 25 @ 70mA @ 10V Emitter- Base Voltage Vebo: 3 V Frequency - Transition: 5GHz Gain: - ID_COMPONENTS: 1949013 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 5000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1W Power Dissipation: 1000 mW Transistor Polarity: PNP Transistor Type: PNP Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 3 V DC Current Gain hFE Max: 25 Gain Bandwidth Product fT: 5000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BFG31 T/R Other Names: 934000180115::BFG31 T/R::BFG31 T/R