Результаты поиска BFG21W,115

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• BFG21W,115
  NXP Semiconductors — NXP Semiconductors BFG21W,115 Collector- Emitter Voltage Vceo Max: 4.5 V Configuration: Single Dual Emitter Continuous Collector Current: 0.5 A Current - Collector (ic) (max): 500mA Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 200mA, 2V Dc Current Gain Hfe Max: 40 @ 200mA @ 2V Emitter- Base Voltage Vebo: 1 V Frequency - Transition: 18GHz Gain: - ID_COMPONENTS: 1948985 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 18000 MHz (Min) Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Package / Case: CMPAK-4 Power - Max: 600mW Power Dissipation: 600 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 4.5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 4.5 V Emitter- Base Voltage VEBO: 1 V DC Current Gain hFE Max: 40 Gain Bandwidth Product fT: 18000 MHz (Min) Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG21W T/R Other Names: 568-1974-2, 934047480115, BFG21W T/R