Результаты поиска BFG135,115
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- NXP Semiconductors — NXP Semiconductors BFG135,115 Collector Current (dc) (max): 150mA Collector- Emitter Voltage Vceo Max: 15 V Collector-base Voltage: 25V Collector-emitter Voltage: 15V Configuration: Single Dual Emitter Continuous Collector Current: 0.15 A Current - Collector (ic) (max): 150mA Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 100mA, 10V Dc Current Gain (min): 80 Dc Current Gain Hfe Max: 80 @ 100mA @ 10V Emitter- Base Voltage Vebo: 2 V Emitter-base Voltage: 2V Frequency (max): 7GHz Frequency - Transition: 7GHz Gain: - ID_COMPONENTS: 1949008 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 7000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): - Number Of Elements: 1 Operating Temp Range: -65C to 175C Operating Temperature Classification: Military Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Package Type: SOT-223 Pin Count: 3 +Tab Power - Max: 1W Power Dissipation: 1000 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2 V DC Current Gain hFE Max: 80 Gain Bandwidth Product fT: 7000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: BFG135 T/R Other Names: 568-1643-2, 933919940115, BFG135 T/R