Результаты поиска BF998,215

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• BF998,215
  NXP Semiconductors — NXP Semiconductors BF998,215 Configuration: Single Dual Gate Continuous Drain Current: 0.03 A Current - Test: 10mA Current Rating: 30mA Drain-source Breakdown Voltage: 12 V Frequency: 200MHz Gain: - Gate-source Breakdown Voltage: +/- 6 V ID_COMPONENTS: 1949183 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 0.6dB Package / Case: SOT-143, SOT-143B, TO-253AA Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 12V Voltage - Test: 8V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 12 V Gate-Source Breakdown Voltage: +/- 6 V Factory Pack Quantity: 3000 Part # Aliases: BF998 T/R Other Names: 568-1973-2, 934002640215, BF998 T/R