Результаты поиска BF908WR,115
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- NXP Semiconductors — NXP Semiconductors BF908WR,115 Application: VHF/UHF Channel Mode: Depletion Channel Type: N Configuration: Single Dual Gate Continuous Drain Current: 0.04 A Current - Test: 15mA Current Rating: 40mA Drain Source Voltage (max): 12V Drain-source Breakdown Voltage: 12 V Frequency: 200MHz Frequency (max): 1GHz Gain: - Gate-source Breakdown Voltage: 8 V ID_COMPONENTS: 1949176 Input Capacitance (typ)@vds: 3.1@8V@Gate 1/1.8@8V@Gate 2pF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 0.6dB Noise Figure (max): 2.5dB Number Of Elements: 1 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 1.7@8VpF Package / Case: CMPAK-4 Package Type: CMPAK Pin Count: 3 +Tab Power - Output: - Power Dissipation: 300 mW Power Dissipation (max): 300mW Reverse Capacitance (typ): 0.03@8VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 12V Voltage - Test: 8V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 12 V Gate-Source Breakdown Voltage: 8 V Factory Pack Quantity: 3000 Part # Aliases: BF908WR T/R Other Names: 568-1969-2, 934031470115, BF908WR T/R