Результаты поиска BF1211WR,115

Найдено 2 результатов.

  • Philips Semiconductors — Philips Semiconductors BF1211WR,115 Product Category: Transistors RF MOSFET Small Signal RoHS: yes Configuration: Single Dual Gate Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 6 V Gate-Source Breakdown Voltage: 6 V Continuous Drain Current: 0.03 A Power Dissipation: 180 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: CMPAK-4 Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BF1211WR
  • NXP Semiconductors — Philips Semiconductors BF1211WR,115 Product Category: Transistors RF MOSFET Small Signal RoHS: yes Configuration: Single Dual Gate Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 6 V Gate-Source Breakdown Voltage: 6 V Continuous Drain Current: 0.03 A Power Dissipation: 180 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: CMPAK-4 Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BF1211WR