Результаты поиска BF1211R,215

Найдено 2 результатов.

• BF1211R,215
  Philips Semiconductors — Philips Semiconductors BF1211R,215 Product Category: Transistors RF MOSFET Power RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 800 MHz Gain: 24 dB Drain-Source Breakdown Voltage: 6 V Continuous Drain Current: 30 mA Gate-Source Breakdown Voltage: 6 V Maximum Operating Temperature: + 150 C Package / Case: SOT-143-4 Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Power Dissipation: 180 mW Product Type: RF MOSFET Power Factory Pack Quantity: 3000 Part # Aliases: BF1211R
• BF1211R,215
  NXP Semiconductors — Philips Semiconductors BF1211R,215 Product Category: Transistors RF MOSFET Power RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Frequency: 800 MHz Gain: 24 dB Drain-Source Breakdown Voltage: 6 V Continuous Drain Current: 30 mA Gate-Source Breakdown Voltage: 6 V Maximum Operating Temperature: + 150 C Package / Case: SOT-143-4 Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Power Dissipation: 180 mW Product Type: RF MOSFET Power Factory Pack Quantity: 3000 Part # Aliases: BF1211R