Результаты поиска BCW61B,215

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• BCW61B,215
  NXP Semiconductors — NXP Semiconductors BCW61B,215 Collector- Emitter Voltage Vceo Max: - 32 V Configuration: Single Continuous Collector Current: - 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 180 Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949580 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Voltage - Collector Emitter Breakdown (max): 32V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 32 V Collector- Emitter Voltage VCEO Max: - 32 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 180 DC Current Gain hFE Max: 30 at 10 uA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BCW61B T/R Other Names: 933324130215::BCW61B T/R::BCW61B T/R