Результаты поиска BCV71
Найдено 12 результатов.
- Fairchild Semiconductor — Small Signal Transistors SOT-23 NPN GP AMP
- Fairchild Semiconductor — TRANSISTOR NPN 60V 500MA SOT-23
- Zetex Semiconductors — SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
- Zetex Semiconductors — Zetex Semiconductors BCV71TA Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V Dc Current Gain Hfe Max: 110 at 2 mA at 5 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 300 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 110 at 2 mA at 5 V DC Current Gain hFE Max: 110 at 2 mA at 5 V
- Zetex Semiconductors — Zetex Semiconductors BCV71TA Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V Dc Current Gain Hfe Max: 110 at 2 mA at 5 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 300 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 300 MHz DC Collector/Base Gain hfe Min: 110 at 2 mA at 5 V DC Current Gain hFE Max: 110 at 2 mA at 5 V
- Zetex Semiconductors — Zetex Semiconductors BCV71TC Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V Dc Current Gain Hfe Max: 110 at 2 mA at 5 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 300 MHz Maximum Dc Collector Current: 0.1 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 330 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: NPN
- KEC [KEC(Korea Electronics)] — EPITAXIAL PLANAR NPN TRANSISTOR
- NXP — Transistors - Arrays TRANS GP TAPE-7
- NXP Semiconductors —
- Diodes — Diodes BCV71RTA Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE Number of Elements: 1 Transistor Element Material: SILICON Transistor Polarity: NPN Power Dissipation Ambient-Max: 0.3300 W Transistor Type: GENERAL PURPOSE SMALL SIGNAL DC Current Gain-Min (hFE): 110 Collector Current-Max (IC): 0.1000 A Collector-emitter Voltage-Max: 60 V Transition Frequency-Nom (fT): 300 MHz
