Результаты поиска BCR 112T E6327

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• BCR 112T E6327
  Infineon Technologies — Infineon Technologies BCR 112T E6327 Current - Collector (ic) (max): 100mA Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5mA, 5V Frequency - Transition: 140MHz Mounting Type: Surface Mount Package / Case: SC-75-3 Power - Max: 250mW Resistor - Base (r1) (ohms): 4.7K Resistor - Emitter Base (r2) (ohms): 4.7K Transistor Type: NPN - Pre-Biased Vce Saturation (max) @ Ib, Ic: 300mV @ 500ВµA, 10mA Voltage - Collector Emitter Breakdown (max): 50V Other Names: BCR112TE6327XT, SP000014126