Результаты поиска BC859CW,115

Найдено 2 результатов.

• BC859CW,115
  NXP Semiconductors — NXP Semiconductors BC859CW,115 Collector- Emitter Voltage Vceo Max: - 30 V Configuration: Single Continuous Collector Current: - 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 420 Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949525 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 420 DC Current Gain hFE Max: 420 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: BC859CW T/R Other Names: 934024320115::BC859CW T/R::BC859CW T/R
• BC859CW,115
  NXP Semiconductors — NXP Semiconductors BC859CW,115 Collector- Emitter Voltage Vceo Max: - 30 V Configuration: Single Continuous Collector Current: - 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 420 Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949525 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 420 DC Current Gain hFE Max: 420 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: BC859CW T/R Other Names: 934024320115::BC859CW T/R::BC859CW T/R