Результаты поиска BC859B,215

Найдено 1 результатов.

• BC859B,215
  NXP Semiconductors — NXP Semiconductors BC859B,215 Collector Current (dc) (max): 100mA Collector- Emitter Voltage Vceo Max: 30 V Collector-base Voltage: 30V Collector-emitter Voltage: 30V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V Dc Current Gain (min): 220 Emitter- Base Voltage Vebo: 5 V Emitter-base Voltage: 5V Frequency (max): 100MHz Frequency - Transition: 100MHz ID_COMPONENTS: 1949534 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 30V Other Names: 933589820215::BC859B T/R::BC859B T/R