Результаты поиска BC856BT,115
Найдено 1 результатов.
- NXP Semiconductors — NXP Semiconductors BC856BT,115 Collector- Emitter Voltage Vceo Max: - 80 V Configuration: Single Continuous Collector Current: - 100 mA Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 220 Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V Emitter- Base Voltage Vebo: - 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949250 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 200 mA Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 150mW Power Dissipation: 150 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 65V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: - 80 V Emitter- Base Voltage VEBO: - 5 V Maximum DC Collector Current: - 200 mA Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 220 DC Current Gain hFE Max: 220 Maximum Power Dissipation: 150 mW Factory Pack Quantity: 3000 Part # Aliases: BC856BT T/R Other Names: 568-4767-2, 934051090115, BC856BT T/R, BC856BT,115