Результаты поиска BC847BPN,115

Найдено 3 результатов.

• BC847BPN115
  NXP Semiconductors —
• BC847BPN,115
  Philips Semiconductors — Philips Semiconductors BC847BPN,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Dual Transistor Polarity: NPN/PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-363 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC847BPN T/R
• BC847BPN,115
  NXP Semiconductors — Philips Semiconductors BC847BPN,115 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Dual Transistor Polarity: NPN/PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-363 DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC847BPN T/R