Результаты поиска BC847B,215
Найдено 2 результатов.
- NXP Semiconductors — NXP Semiconductors BC847B.215 Collector Emitter Voltage V(br)ceo: 45V Dc Collector Current: 100mA Dc Current Gain Hfe: 290 No. Of: RoHS Compliant Operating Temperature Range: -65°C To +150°C Power Dissipation Pd: 250mW Rohs Compliant: Yes Transistor Case Style: SOT-23 Transistor Polarity: NPN
- NXP Semiconductors — NXP Semiconductors BC847B,215 Collector Current (dc) (max): 100mA Collector- Emitter Voltage Vceo Max: 45 V Collector-base Voltage: 50V Collector-emitter Voltage: 45V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V Dc Current Gain (min): 200 Emitter- Base Voltage Vebo: 6 V Emitter-base Voltage: 6V Frequency (max): 100MHz Frequency - Transition: 100MHz ID_COMPONENTS: 1949491 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-23-3, TO-236-3, Micro3в„ў, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 2 mA at 5 V DC Current Gain hFE Max: 200 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BC847B T/R Other Names: 568-1633-2, 933589590215, BC847B T/R