Результаты поиска BC847AW,115

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• BC847AW,115
  NXP Semiconductors — NXP Semiconductors BC847AW,115 Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949794 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 250 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 45V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz Brand: NXP Semiconductors DC Collector/Base Gain hfe Min: 110 at 2 mA at 5 V DC Current Gain hFE Max: 110 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BC847AW T/R Other Names: 934021760115, BC847AW T/R