Результаты поиска BC817-40,215

Найдено 3 результатов.

• BC817-40,215
  Philips Semiconductors — Philips Semiconductors BC817-40,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 250 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 250 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC817-40 T/R
• BC817-40.215
  NXP Semiconductors — NXP Semiconductors BC817-40.215 Collector Emitter Voltage V(br)ceo: 45V Dc Collector Current: 500mA Dc Current Gain Hfe: 250 No. Of: RoHS Compliant Operating Temperature Range: -65°C To +150°C Power Dissipation Pd: 250mW Rohs Compliant: Yes Transistor Case Style: SOT-23 Transistor Polarity: NPN
• BC817-40,215
  NXP Semiconductors — Philips Semiconductors BC817-40,215 Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 250 at 100 mA at 1 V, 40 at 500 mA at 1 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: SOT-23 DC Current Gain hFE Max: 250 at 100 mA at 1 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BC817-40 T/R