Результаты поиска BC808-25LT1G

Найдено 4 результатов.

• BC808-25LT1G
  ON Semiconductor — Transistors Bipolar- General Purpose 500mA 30V PNP
• BC808-25LT1G
  ON Semiconductor — TRANSISTOR PNP 25V 500MA SOT-23
• SBC808-25LT1G
  ON Semiconductor — ON Semiconductor SBC808-25LT1G Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 25 V Configuration: Single Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V Dc Current Gain Hfe Max: 160 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 25 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 160 at 100 mA at 1 V DC Current Gain hFE Max: 160 at 100 mA at 1 V
• SBC808-25LT1G
  ON Semiconductor — ON Semiconductor SBC808-25LT1G Collector- Base Voltage Vcbo: 30 V Collector- Emitter Voltage Vceo Max: 25 V Configuration: Single Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V Dc Current Gain Hfe Max: 160 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: 25 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 160 at 100 mA at 1 V DC Current Gain hFE Max: 160 at 100 mA at 1 V