Результаты поиска BC807-25LT1G

Найдено 6 результатов.

• BC807-25LT1G
  ON Semiconductor — Transistors Bipolar- General Purpose 500mA 50V PNP
• BC807-25LT1G
  ON Semiconductor — TRANS PNP GP 500MA 45V SOT23
• BC807-25LT1G
  ON Semiconductor — TRANS PNP GP 500MA 45V SOT23
• BC807-25LT1G
  ON Semiconductor — TRANS PNP GP 500MA 45V SOT23
• LBC807-25LT1G
  LRC [Leshan Radio Company] — General Purpose Transistors PNP Silicon
• SBC807-25LT1G
  ON Semiconductor — ON Semiconductor SBC807-25LT1G Collector- Base Voltage Vcbo: 50 V Collector- Emitter Voltage Vceo Max: 45 V Configuration: Single Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V, 40 at 500 mA at 1 V Dc Current Gain Hfe Max: 160 at 100 mA at 1 V Emitter- Base Voltage Vebo: 5 V Gain Bandwidth Product Ft: 100 MHz Maximum Dc Collector Current: 0.5 A Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 300 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SOT-23 Transistor Polarity: PNP Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 160 at 100 mA at 1 V, 40 at 500 mA at 1 V DC Current Gain hFE Max: 160 at 100 mA at 1 V