Результаты поиска BAT54A,215

Найдено 3 результатов.

• BAT54A215
  NXP [NXP Semiconductors] — Schottky barrier diodes
• BAT54A,215
  NXP Semiconductors — NXP Semiconductors BAT54A,215 Avg. Forward Curr (max): 0.2A Configuration: Dual Common Anode Current - Average Rectified (io) (per Diode): 200mA (DC) Current - Reverse Leakage @ Vr: 2?µA @ 25V Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Forward Continuous Current: 0.2 A Forward Voltage: 0.8V Forward Voltage Drop: 0.8 V @ 0.1 A ID_COMPONENTS: 1943354 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 0.6 A Maximum Reverse Leakage Current: 2 uA @ 25 V Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temp Range: -65C to 125C Operating Temperature Classification: Military Operating Temperature Range: + 125 C Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Peak Non-repetitive Surge Current (max): 0.6A Peak Rep Rev Volt: 30V Peak Reverse Voltage: 30 V Pin Count: 3 Product: Schottky Diodes Recovery Time: 5 ns Rectifier Type: Schottky Diode Rev Curr: 2uA Rev Recov Time: 5ns Reverse Recovery Time (trr): 5ns Series: - Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Dc Reverse (vr) (max): 30V Voltage - Forward (vf) (max) @ If: 800mV @ 100mA Other Names: 568-1611-2, 933976360215, BAT54A T/R
• 1808N221K302T
  Walsin Technology — Walsin Technology 1808N221K302T Applications: General Purpose Electrostatic Capacitors: Ceramic Composition