Результаты поиска 6N135M

Найдено 5 результатов.

• 6N135M
  Lite-On Technology — Everlight Electronics 6N135M Configuration: 1 Channel Current - Dc Forward (if): 25mA Current - Output / Channel: 8mA Current Transfer Ratio: 7 % Current Transfer Ratio (max): 50% @ 16mA Current Transfer Ratio (min): 5% @ 16mA Input Type: DC Isolation Voltage: 5000 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Baud Rate: 1 MBps Maximum Fall Time: 1.5 us Maximum Forward Diode Voltage: 1.8 V Maximum Input Diode Current: 25 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 100 mW Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 1.5 us Minimum Operating Temperature: - 55 C Mounting Type: * Number Of Channels: 1 Output Device: Phototransistor Output Type: Transistor with Vcc Package / Case: DIP-8 Series: - Vce Saturation (max): - Voltage - Isolation: 5000Vrms Voltage - Output: -
• 6N135M
  Fairchild Semiconductor — Everlight Electronics 6N135M Configuration: 1 Channel Current - Dc Forward (if): 25mA Current - Output / Channel: 8mA Current Transfer Ratio: 7 % Current Transfer Ratio (max): 50% @ 16mA Current Transfer Ratio (min): 5% @ 16mA Input Type: DC Isolation Voltage: 5000 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Baud Rate: 1 MBps Maximum Fall Time: 1.5 us Maximum Forward Diode Voltage: 1.8 V Maximum Input Diode Current: 25 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 100 mW Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 1.5 us Minimum Operating Temperature: - 55 C Mounting Type: * Number Of Channels: 1 Output Device: Phototransistor Output Type: Transistor with Vcc Package / Case: DIP-8 Series: - Vce Saturation (max): - Voltage - Isolation: 5000Vrms Voltage - Output: -
• 6N135M
  Fairchild Semiconductor — Everlight Electronics 6N135M Configuration: 1 Channel Current - Dc Forward (if): 25mA Current - Output / Channel: 8mA Current Transfer Ratio: 7 % Current Transfer Ratio (max): 50% @ 16mA Current Transfer Ratio (min): 5% @ 16mA Input Type: DC Isolation Voltage: 5000 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Baud Rate: 1 MBps Maximum Fall Time: 1.5 us Maximum Forward Diode Voltage: 1.8 V Maximum Input Diode Current: 25 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 100 mW Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 1.5 us Minimum Operating Temperature: - 55 C Mounting Type: * Number Of Channels: 1 Output Device: Phototransistor Output Type: Transistor with Vcc Package / Case: DIP-8 Series: - Vce Saturation (max): - Voltage - Isolation: 5000Vrms Voltage - Output: -
• 6N135M
  Everlight Electronics — Everlight Electronics 6N135M Configuration: 1 Channel Current - Dc Forward (if): 25mA Current - Output / Channel: 8mA Current Transfer Ratio: 7 % Current Transfer Ratio (max): 50% @ 16mA Current Transfer Ratio (min): 5% @ 16mA Input Type: DC Isolation Voltage: 5000 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Baud Rate: 1 MBps Maximum Fall Time: 1.5 us Maximum Forward Diode Voltage: 1.8 V Maximum Input Diode Current: 25 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 100 mW Maximum Reverse Diode Voltage: 5 V Maximum Rise Time: 1.5 us Minimum Operating Temperature: - 55 C Mounting Type: * Number Of Channels: 1 Output Device: Phototransistor Output Type: Transistor with Vcc Package / Case: DIP-8 Series: - Vce Saturation (max): - Voltage - Isolation: 5000Vrms Voltage - Output: -
• 6N135M-V
  Everlight Electronics — Everlight Electronics 6N135M-V Product Category: High Speed Optocouplers RoHS: yes Current Transfer Ratio: 7 % Maximum Baud Rate: 1 MBps Maximum Forward Diode Voltage: 1.8 V Maximum Reverse Diode Voltage: 5 V Maximum Power Dissipation: 100 mW Maximum Operating Temperature: + 100 C Minimum Operating Temperature: - 55 C Package / Case: DIP-8 Fall Time: 1.5 us Forward Current: 25 mA Isolation Voltage: 5000 Vrms Number of Channels per Chip: 1 Channel Output Device: Phototransistor Rise Time: 1.5 us