Результаты поиска 2SK3742(Q,M)

Найдено 6 результатов.

• 2SK3742
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3742 Current - Continuous Drain (id) @ 25В° C: 5A Drain To Source Voltage (vdss): 900V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 25nC @ 10V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Mounting Type: Through Hole Package / Case: TO-220 (SIS) Power - Max: 45W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Series: - Vgs(th) (max) @ Id: 5V @ 1mA Product Category: MOSFET
• 2SK3742
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3742 Current - Continuous Drain (id) @ 25В° C: 5A Drain To Source Voltage (vdss): 900V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 25nC @ 10V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Mounting Type: Through Hole Package / Case: TO-220 (SIS) Power - Max: 45W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Series: - Vgs(th) (max) @ Id: 5V @ 1mA Product Category: MOSFET
• 2SK3742
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3742 Current - Continuous Drain (id) @ 25В° C: 5A Drain To Source Voltage (vdss): 900V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 25nC @ 10V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Mounting Type: Through Hole Package / Case: TO-220 (SIS) Power - Max: 45W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Series: - Vgs(th) (max) @ Id: 5V @ 1mA Product Category: MOSFET
• 2SK3742(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3742(Q) Configuration: Single Continuous Drain Current: 5 A Current - Continuous Drain (id) @ 25В° C: 5A Drain To Source Voltage (vdss): 900V Drain-source Breakdown Voltage: 900 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 25nC @ 10V Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220 (SIS) Power - Max: 45W Power Dissipation: 450 W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Resistance Drain-source Rds (on): 2.5 Ohm @10V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 1mA Other Names: 2SK3742Q
• 2SK3742(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3742(Q) Configuration: Single Continuous Drain Current: 5 A Current - Continuous Drain (id) @ 25В° C: 5A Drain To Source Voltage (vdss): 900V Drain-source Breakdown Voltage: 900 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 25nC @ 10V Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220 (SIS) Power - Max: 45W Power Dissipation: 450 W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Resistance Drain-source Rds (on): 2.5 Ohm @10V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 1mA Other Names: 2SK3742Q
• 2SK3742(Q,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3742(Q,M) Product Category: MOSFETs - Power & Small Signal RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 900 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 5 A Rds On: 2.2 Ohms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220 Brand: Toshiba Fall Time: 40 ns Forward Transconductance - Min: 3.5 S Gate Charge Qg: 25 nC Minimum Operating Temperature: - 55 C Power Dissipation: 45 W Rise Time: 100 ns Factory Pack Quantity: 200