Результаты поиска 2SK3565(Q,M)

Найдено 5 результатов.

• 2SK3565
  TOSHIBA — MOSFET 2SK/2SJ Series
• 2SK3565(Q,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3565(Q,M) Current - Continuous Drain (id) @ 25?° C: 5A Drain To Source Voltage (vdss): 900V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 28nC @ 10V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Mounting Type: Through Hole Package / Case: 2-10U1B Power - Max: 45W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Series: - Vgs(th) (max) @ Id: 4V @ 1mA Factory Pack Quantity: 50 Other Names: 2SK3565(Q), 2SK3565Q, 2SK3565QM
• 2SK3565(Q,M)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3565(Q,M) Current - Continuous Drain (id) @ 25?° C: 5A Drain To Source Voltage (vdss): 900V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 28nC @ 10V Input Capacitance (ciss) @ Vds: 1150pF @ 25V Mounting Type: Through Hole Package / Case: 2-10U1B Power - Max: 45W Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Series: - Vgs(th) (max) @ Id: 4V @ 1mA Factory Pack Quantity: 50 Other Names: 2SK3565(Q), 2SK3565Q, 2SK3565QM
• 2SK3565(STA4,Q,M
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3565(STA4,Q,M Configuration: Single Continuous Drain Current: 5 A Drain-source Breakdown Voltage: 900 V Gate-source Breakdown Voltage: +/- 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: SC-67 Power Dissipation: 45 W Product Category: MOSFET Resistance Drain-source Rds (on): 2 Ohms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 900 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 2 Ohms
• 2SK3565(STA4,Q,M
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK3565(STA4,Q,M Configuration: Single Continuous Drain Current: 5 A Drain-source Breakdown Voltage: 900 V Gate-source Breakdown Voltage: +/- 30 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: SC-67 Power Dissipation: 45 W Product Category: MOSFET Resistance Drain-source Rds (on): 2 Ohms Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 900 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 2 Ohms