Результаты поиска 2SK2916(F)
Найдено 5 результатов.
- TOSHIBA — Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
- TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SK2916(F) Configuration: Single Continuous Drain Current: 14 A Current - Continuous Drain (id) @ 25В° C: 14A Drain To Source Voltage (vdss): 500V Drain-source Breakdown Voltage: 500 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 58nC @ 10V Gate-source Breakdown Voltage: 30 V Input Capacitance (ciss) @ Vds: 2600pF @ 10V Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: 2-16F1B Power - Max: 80W Power Dissipation: 80 W Rds On (max) @ Id, Vgs: 400 mOhm @ 7A, 10V Resistance Drain-source Rds (on): 0.4 Ohms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 1mA
- TDK Corporation — CAP CER 4.7UF 25V 10% JB 1206
- TDK Corporation — CAP CER 4.7UF 25V 10% JB 1206
- TDK Corporation — CAP CER 4.7UF 25V 10% JB 1206
