Результаты поиска 2SJ412(Q)

Найдено 4 результатов.

• 2SJ412
  TOSHIBA — TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
• 2SJ412(Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SJ412(Q) Current - Continuous Drain (id) @ 25В° C: 16A Drain To Source Voltage (vdss): 100V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 48nC @ 10V Input Capacitance (ciss) @ Vds: 1100pF @ 10V Mounting Type: Through Hole Package / Case: TO-220 Power - Max: 60W Rds On (max) @ Id, Vgs: 210 mOhm @ 6A, 10V Series: - Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 2SJ412Q
• 2SJ412(SM,Q)
  Toshiba — MOSFETs - Power & Small Signal P-Ch 100V 16A Rdson 0.21 Ohm
• 2SJ412(TE24L,Q)
  TOSHIBA Semiconductor — TOSHIBA Semiconductor 2SJ412(TE24L,Q) Current - Continuous Drain (id) @ 25В° C: 16A Drain To Source Voltage (vdss): 100V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 48nC @ 10V Input Capacitance (ciss) @ Vds: 1100pF @ 10V Mounting Type: Surface Mount Package / Case: TO-220SM Power - Max: 60W Rds On (max) @ Id, Vgs: 210 mOhm @ 6A, 10V Series: - Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 2SJ412QTR