Результаты поиска 2PD2150,115
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- NXP Semiconductors — NXP Semiconductors 2PD2150,115 Collector- Emitter Voltage Vceo Max: 20 V Configuration: Single Continuous Collector Current: 3 A Current - Collector (ic) (max): 3A Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 180 Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 220MHz Gain Bandwidth Product Ft: 220 MHz ID_COMPONENTS: 1949449 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5 A Maximum Operating Frequency: 220 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 2W Power Dissipation: 2 W Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 2A Voltage - Collector Emitter Breakdown (max): 20V RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 20 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 5 A Gain Bandwidth Product fT: 220 MHz DC Collector/Base Gain hfe Min: 180 DC Current Gain hFE Max: 390 Maximum Power Dissipation: 2 W Factory Pack Quantity: 1000 Other Names: 934059292115