Результаты поиска 2PC4617Q,115

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• 2PC4617Q,115
  NXP Semiconductors — NXP Semiconductors 2PC4617Q,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 150mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V Emitter- Base Voltage Vebo: 7 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949612 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.15 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: EMT3 (SOT-416, SC-75-3) Power - Max: 150mW Power Dissipation: 150 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 7 V Maximum DC Collector Current: 0.15 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 120 at 1 mA at 6 V DC Current Gain hFE Max: 120 at 1 mA at 6 V Maximum Power Dissipation: 150 mW Factory Pack Quantity: 3000 Part # Aliases: 2PC4617Q T/R Other Names: 2PC4617Q T/R, 934043520115