Результаты поиска 2PB1219AQ,115

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• 2PB1219AQ,115
  NXP Semiconductors — NXP Semiconductors 2PB1219AQ,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Current - Collector (ic) (max): 500mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 85 @ 150mA, 10V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949795 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 0.5 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-70-3, SOT-323-3 Power - Max: 200mW Power Dissipation: 200 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 600mV @ 30mA, 300mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 85 at 150 mA at 10 V, 40 at 500 mA at 10 V DC Current Gain hFE Max: 85 at 150 mA at 10 V Maximum Power Dissipation: 200 mW Factory Pack Quantity: 3000 Part # Aliases: 2PB1219AQ T/R Other Names: 2PB1219AQ T/R, 934033190115