Результаты поиска 2N7002P,215

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• 2N7002P,215
  NXP Semiconductors — NXP Semiconductors 2N7002P,215 Configuration: Single Continuous Drain Current: 0.36 A Current - Continuous Drain (id) @ 25?° C: 300mA Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.6nC @ 4.5V Gate Charge Qg: 0.6 nC Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1951766 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 420 mW Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.4V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 1.3 Ohms Fall Time: 4 ns Rise Time: 4 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 10 ns Other Names: 934064132215