Результаты поиска 2N7002E-T1-GE3

Найдено 2 результатов.

• 2N7002E-T1-GE3
  Vishay Intertechnology — VPG (Vishay Precision Group) 2N7002E-T1-GE3 Mfr Package Description: HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2400 A DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3 ohm
• 2N7002E-T1-GE3
  VPG (Vishay Precision Group) — VPG (Vishay Precision Group) 2N7002E-T1-GE3 Mfr Package Description: HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3500 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.2400 A DS Breakdown Voltage-Min: 60 V Drain-source On Resistance-Max: 3 ohm