Результаты поиска 2N7002,215

Найдено 3 результатов.

• 2N7002-215
  NXP [NXP Semiconductors] — 60 V, 300 mA N-channel Trench MOSFET
• 2N7002,215
  NXP Semiconductors — NXP Semiconductors 2N7002,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.3 A Current - Continuous Drain (id) @ 25?° C: 300mA Drain Current (max): 300mA Drain Efficiency: Not Required% Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Drain-source On-res: 5Ohm Drain-source On-volt: 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Frequency (max): Not RequiredMHz Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 30 V Gate-source Voltage (max): ?±30V ID_COMPONENTS: 1951772 Input Capacitance (ciss) @ Vds: 50pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 830mW Power Dissipation: 830 mW Power Gain: Not RequireddB Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 5 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 5000 mOhms Factory Pack Quantity: 3000 Part # Aliases: 2N7002 T/R Other Names: 2N7002 T/R, 568-1369-2, 934003470215
• 2N7002,215
  NXP Semiconductors — NXP Semiconductors 2N7002,215 Channel Mode: Enhancement Configuration: Single Continuous Drain Current: 0.3 A Current - Continuous Drain (id) @ 25?° C: 300mA Drain Current (max): 300mA Drain Efficiency: Not Required% Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Drain-source On-res: 5Ohm Drain-source On-volt: 60V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Frequency (max): Not RequiredMHz Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 30 V Gate-source Voltage (max): ?±30V ID_COMPONENTS: 1951772 Input Capacitance (ciss) @ Vds: 50pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure: Not RequireddB Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Output Power (max): Not RequiredW Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Package Type: TO-236AB Pin Count: 3 Polarity: N Power - Max: 830mW Power Dissipation: 830 mW Power Gain: Not RequireddB Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Resistance Drain-source Rds (on): 5 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Type: Power MOSFET Vgs(th) (max) @ Id: 2.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 30 V Resistance Drain-Source RDS (on): 5000 mOhms Factory Pack Quantity: 3000 Part # Aliases: 2N7002 T/R Other Names: 2N7002 T/R, 568-1369-2, 934003470215